Annealing of Ge nanocrystals on Si(001) at 550°C:: Metastability of huts and the stability of pyramids and domes

被引：102

作者：

Medeiros-Ribeiro, G ^{[1
]}

Kamins, TI ^{[1
]}

Ohlberg, DAA ^{[1
]}

Williams, RS ^{[1
]}

机构：

[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.58.3533

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed a series of annealing experiments for Ge nanocrystals on Si(001) at 550 degrees C in order to clarify some issues related to island stability and coarsening. We determined the nanocrystal shape and size distributions for 8 Ge equivalent monolayers as a function of annealing time for up to 80 min after terminating the depositions. Elongated islands or "huts" disappear within 30 s, leaving only equiaxial islands, the "pyramids" and "domes." During the first 10 min of annealing, the nanocrystals grow further by drawing additional Ge from the wetting layer. Thereafter, the pyramid and dome size distributions are stable.

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页码：3533 / 3536

页数：4

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