Chip to system levels thermal needs and alternative thermal technologies for high brightness LEDS

被引:26
作者
Arik, Mehmet
Setlur, Anant
Weaver, Stanton
Haitko, Deborah
Petroski, James
机构
[1] GE Co, Global Res Ctr, Thermal Syst Lab, Niskayuna, NY 12309 USA
[2] GE Co, Global Res Ctr, Opt Mat Lab, Niskayuna, NY 12309 USA
[3] GE Co, Global Res Ctr, Micro & Nano Struct Tech Lab, Niskayuna, NY 12309 USA
[4] GE Co, Global Res Ctr, Elect Mat Lab, Niskayuna, NY 12309 USA
[5] GE Luminat, Valley View, OH 44125 USA
关键词
D O I
10.1115/1.2753958
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Light emitting diodes (LEDs) historically have been used for indicators and produced low amounts of heat. The introduction of high brightness LEDs with white light and monochromatic colors has allowed them to penetrate specialty and general illumination applications. The increased electrical currents used to drive the LEDs have resulted in higher heat fluxes than those for average silicon integrated circuits (i.e., ICs). This has created a need to focus more attention on the thermal management engineering of LED power packages. The output of a typical commercial high brightness, 1 mm(2), LED has exceeded 100 1m at drive levels approaching 3 W. This corresponds to a heat flux of up to 300 W/cm(2). Novel thermal solutions need to address system architectures, packaging, phosphors for light color conversion, and encapsulants and fillers for optical extraction. In this paper, the effect of thermal management on packaging architectures, phosphors, encapsulants, and system design are discussed. Additionally; discussions of microscopic defects due to packaging problems as well as chip active layer defects are presented through experimental and computational findings.
引用
收藏
页码:328 / 338
页数:11
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