Hole spin polarization in Ga1-xAlxAs:Mn structures -: art. no. 153305

被引:11
作者
Ghazali, A
Lima, ICD
Boselli, MA
机构
[1] Univ Paris 07, CNRS, UMR 7588, Phys Solides Grp, F-75251 Paris 05, France
[2] Univ Paris 06, CNRS, UMR 7588, Phys Solides Grp, F-75251 Paris 05, France
[3] Univ Estado Rio de Janeiro, Inst Fis, BR-20500013 Rio De Janeiro, Brazil
关键词
D O I
10.1103/PhysRevB.63.153305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A self-consistent calculation of the electronic properties of Gal(1-x)Al(x)As:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. The available experimental results are compared with the theory.
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页数:4
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