Hole spin polarization in Ga1-xAlxAs:Mn structures -: art. no. 153305

被引：11

作者：

Ghazali, A

Lima, ICD

Boselli, MA

机构：

[1] Univ Paris 07, CNRS, UMR 7588, Phys Solides Grp, F-75251 Paris 05, France

[2] Univ Paris 06, CNRS, UMR 7588, Phys Solides Grp, F-75251 Paris 05, France

[3] Univ Estado Rio de Janeiro, Inst Fis, BR-20500013 Rio De Janeiro, Brazil

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.63.153305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A self-consistent calculation of the electronic properties of Gal(1-x)Al(x)As:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. The available experimental results are compared with the theory.

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页数：4

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