Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures -: art. no. 081302

被引：59

作者：

Ganichev, SD ^{[1
]}

Schneider, P

Bel'kov, VV

Ivchenko, EL

Tarasenko, SA

Wegscheider, W

Weiss, D

Schuh, D

Murdin, BN

Phillips, PJ

Pidgeon, CR

Clarke, DG

Merrick, M

Murzyn, P

Beregulin, EV

Prettl, W

机构：

[1] Univ Regensburg, Fak Phys, D-93040 Regensburg, Germany

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[4] Univ Surrey, Guildford GU2 7XH, Surrey, England

[5] Heriot Watt Univ, Dept Phys, Edinburgh, Midlothian, Scotland

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.68.081302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.

引用

页码：153 / 156

页数：4

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