Effect of residual stress on the Raman-spectrum analysis of tetrahedral amorphous carbon films

被引:145
作者
Shin, JK
Lee, CS
Lee, KR
Eun, KY
机构
[1] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 136791, South Korea
[2] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
关键词
D O I
10.1063/1.1343840
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tetrahedral amorphous carbon (ta-C) films deposited by the filtered vacuum arc process have large compressive residual growth stresses that depend on the atomic-bond structure. We observed that the G peak of the Raman spectrum shifts to higher frequency by 4.1 +/-0.5 cm(-1)/GPa due to the residual compressive stress. This value agrees well with the calculated Raman-peak shift of the graphite plane due to applied stress. By considering the effect of residual stress on the G-peak position, we also observe a similar dependence between the G-peak position and the atomic-bond structure in both ta-C and hydrogenated amorphous carbon (a-C:H) films; namely, that a higher sp(2) bond content shifts the G-peak position to higher frequency. (C) 2001 American Institute of Physics.
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页码:631 / 633
页数:3
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