Novel germanium-based magnetic semiconductors

被引：127

作者：

Tsui, F ^{[1
]}

He, L

Ma, L

Tkachuk, A

Chu, YS

Nakajima, K

Chikyow, T

机构：

[1] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

[2] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.91.177203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high T-C and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum T-C achieved in the semiconducting materials is similar to270 K at a composition of Co0.12Mn0.03Ge0.85.

引用

页数：4

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