Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces

被引：18

作者：

Agarwal, S

Valipa, MS

Hoex, B

van de Sanden, MCM

Maroudas, D

Aydil, ES

机构：

[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[2] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

[3] Univ Massachusetts, Dept Chem Engn, Amherst, MA 01003 USA

[4] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

SURFACE SCIENCE | 2005年 / 598卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

amorphous surfaces; amorphous thin films; chemical vapor deposition; plasma processing; silane; silicon; surface chemical reaction;

D O I：

10.1016/j.susc.2005.09.026

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Interactions of SiH3 radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH3 radicals abstract surface silicon deuterides through an Eley-Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH3 insertion into Si-Si bonds over the substrate temperature range of 60-300 degrees C. Some fraction of SiH3 adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH3 and the temperature dependent smoothening mechanism of a-Si:H thin films. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：35 / 44

页数：10

共 39 条

[1] Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces [J].