The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane

被引：43

作者：

Duan, HL ^{[1
]}

Zaharias, GA ^{[1
]}

Bent, SF ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

来源：

THIN SOLID FILMS | 2001年 / 395卷 / 1-2期

关键词：

filament temperature; hot-wire chemical vapor deposition (HW-CVD); thin films;

D O I：

10.1016/S0040-6090(01)01203-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Filament temperature is an important parameter in the hot-wire chemical vapor deposition (HW-CVD) process, affecting both the growth rate and electronic properties of the deposited thin films. Here we describe direct detection of gaseous free radicals produced as a function of filament temperature in the HW-CVD of amorphous silicon from silane. Radicals have been identified using vacuum ultraviolet (VUV) single photon ionization (SPI), with 118-nm light formed by the 9th harmonic of a Nd:YAG laser. The major silicon-containing gas-phase species identified by SPI during hot-wire activation of silane gas are Si, SiH3 and Si2H6. At the lower filament temperatures (900-1300 degreesC) studied, consumption of silane is observed without significant formation of Si-containing radicals. The concentration of Si rises rapidly with filament temperature near T-til = 1300 degreesC before leveling off at temperatures above 1800 degreesC, while SiH3 and Si2H6 concentrations become significant only at the highest temperatures. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：36 / 41

页数：6

共 31 条

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