A low-noise, 900-MHz VCO in 0.6-μm CMOS

被引:183
作者
Park, CH [1 ]
Kim, B [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
关键词
CMOS oscillator; frequency synthesizer; phase noise; ring oscillator; voltage-controlled oscillator (VCO);
D O I
10.1109/4.760367
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a low-noise, 900-MNz, voltage-controlled oscillator (VCO) fabricated in a 0.6-mu m CMOS technology. The VCO consists of four-stage fully differential delay cells performing full switching, It utilizes dual-delay path techniques to achieve high oscillation frequency and obtain a wide tuning range. The VCO operates at 750 MHz to 1.2 GHz, and the tuning range is as large as 50%, The measured results of the phase noise are -101 dBc/Hz at 100-kHz offset and -117 dBc/Hz at 600-kHz offset from the carrier frequency. This value is comparable to that of LC-based integrated oscillators. The oscillator consumes 10 mA from a 3.0-V power supply. A prototype frequency synthesizer with the VCO is also implemented in the same technology, and the measured phase noise of the synthesizer is -113 dBc/Hz at 100-kHz offset.
引用
收藏
页码:586 / 591
页数:6
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