Nitrogen-activated transitions, level repulsion, and band gap reduction in GaAs1-xNx with x<0.03

被引：307

作者：

Perkins, JD ^{[1
]}

Mascarenhas, A ^{[1
]}

Zhang, Y ^{[1
]}

Geisz, JF ^{[1
]}

Friedman, DJ ^{[1
]}

Olson, JM ^{[1
]}

Kurtz, SR ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.82.3312

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report electroreflectance spectra for a series of GaAs1-xNx samples with x less than 0.03. For all samples, the fundamental band gap transition (E-0) and the transition from the spin-orbit split-off valence band (E-0 + Delta(0)) are observed. For samples with x greater than or equal to 0.008, an additional transition (E+) is observed. With increasing nitrogen content, the increase in E+ is linear in, and nearly equal to, the band gap reduction indicative of a nitrogen-induced level repulsion. The directly observed E+ transition may arise from either a nitrogen-related resonant level or a disorder-activated indirect transition. [S0031-9007(99)08950-4].

引用

页码：3312 / 3315

页数：4

共 18 条

[1] Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys [J].