A new quantum dot formation process using wet etching of poly-Si along grain boundaries

被引：1

作者：

Yoo, SJ ^{[1
]}

Lee, J ^{[1
]}

Shin, H ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept EECS, Taejon 305701, South Korea

来源：

MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/IMNC.2000.872738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：248 / 249

页数：2

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