Voltage and temperature dependencies of conductivity in gated graphene

被引：143

作者：

Vasko, F. T. ^{[1
,2
]}

Ryzhii, V. ^{[2
,3
]}

机构：

[1] NAS Ukraine, Inst Semicond Phys, Prospect Nauki 41, UA-03028 Kiev, Ukraine

[2] Univ Aizu, Ikki, Aizu Wakamatsu 9658580, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.76.233404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections (the characteristics of disorder were taken from the scanning tunneling microscopy data) and by acoustic phonons. The calculations are based on the quasiclassical kinetic equation with the normalization condition fixed by surface charge. The gate-voltage and temperature effects on the resistance peak, which is centered at the point of intrinsic conductivity, are found to be in agreement with the transport measurements.

引用

页数：4

共 34 条

[1] Screening effect and impurity scattering in monolayer graphene [J].