Microwave performance of MCM-D embedded capacitors with interconnects

被引：8

作者：

Post, JE

机构：

[1] Albuquerque, NM 87112, 1523 Canyon Hills, Dr., NE

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2005年 / 46卷 / 05期

关键词：

integrated passives; microwave circuit integration; embedded capacitors; decoupling;

D O I：

10.1002/mop.21025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the microwave performance of 1.5-81-pF embedded capacitors constructed by placing a 175-nm-thick anodized layer between the 2-mu m-thick ground and power planes in a silicon multichip-module-deposited (MCM-D) process. Analysis of all equivalent-circuit model shows that the intrinsic quality,factor of these embedded capacitors is approximately 176 and that the overall quality factor is limited primarily by the resistance and inductance of the associated interconnect. (c) 2005 Wiley Periodicals, Inc.

引用

页码：487 / 492

页数：6

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