Dry release fabrication and testing of SiC electrostatic cantilever actuators

被引:15
作者
Jiang, LD
Hassan, M
Cheung, R
Harris, AJ
Burdess, JS
Zorman, CA
Mehregany, M
机构
[1] Univ Edinburgh, Sch Engn & Elect, Scottish Microelect Ctr, Edinburgh EH9 3JF, Midlothian, Scotland
[2] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[3] Newcastle Univ, Sch Mech & Syst Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[4] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
关键词
SiC actuator; inductively coupled plasma; fundamental resonance frequency;
D O I
10.1016/j.mee.2004.12.015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a simple, dry etching-based surface micromachining technique for the fabrication of single-layer polycrystalline 3C-SiC electrostatic actuators. The technique has utilized a single inductively coupled plasma recipe to etch and release metal patterned SiC structural layers. To demonstrate the simplicity of the process, SiC cantilever actuators with different beam lengths have been successfully fabricated using this method. By applying a combination of ac and dc voltages, the fabricated devices have been electrostatically actuated. The fundamental resonance frequencies of fabricated cantilevers with different lengths have been observed to range from 66.65 KHz to 1.729 MHz. The amplitudes of the fundamental resonance peaks with respect to the excitation voltages have also been systematically studied. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:106 / 111
页数:6
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