Temperature dependence of the phase-coherence length in InN nanowires

被引：24

作者：

Bloemers, Ch. ^{[1
]}

Schaepers, Th.

Richter, T.

Calarco, R.

Lueth, H.

Marso, M.

机构：

[1] Res Ctr Julich GmbH, IBN 1, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

关键词：

D O I：

10.1063/1.2905268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root mean square and the correlation field of the conductance fluctuations at various temperatures, the phase-coherence length was determined. (C) 2008 American Institute of Physics.

引用

页数：3

共 24 条

[1] ALTSHULER BL, 1985, JETP LETT+, V41, P648
[2] EFFECTS OF ELECTRON-ELECTRON COLLISIONS WITH SMALL ENERGY TRANSFERS ON QUANTUM LOCALIZATION
ALTSHULER, BL
ARONOV, AG
KHMELNITSKY, DE
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (36): : 7367 - 7386
[3] FLUX-CANCELLATION EFFECT ON NARROW-CHANNEL MAGNETORESISTANCE FLUCTUATIONS
BEENAKKER, CWJ
VANHOUTEN, H
[J]. PHYSICAL REVIEW B, 1988, 37 (11): : 6544 - 6546
[4] BEENAKKER CWJ, 1991, SOLID STATE PHYS, V44, P1
[5] Nanowire resonant tunneling diodes
Björk, MT
Ohlsson, BJ
Thelander, C
Persson, AI
Deppert, K
Wallenberg, LR
Samuelson, L
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (23) : 4458 - 4460
[6] Vertical wrap-gated nanowire transistors
Bryllert, T
Wernersson, LE
Löwgren, T
Samuelson, L
[J]. NANOTECHNOLOGY, 2006, 17 (11) : S227 - S230
[7] GaN and InN nanowires grown by MBE: A comparison
Calarco, R.
Marso, M.
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 87 (03): : 499 - 503
[8] Transport properties of InN nanowires
Chang, CY
Chi, GC
Wang, WM
Chen, LC
Chen, KH
Ren, F
Pearton, SJ
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (09)
[9] Tunable double quantum dots in InAs nanowires defined by local gate electrodes
Fasth, C
Fuhrer, A
Björk, MT
Samuelson, L
[J]. NANO LETTERS, 2005, 5 (07) : 1487 - 1490
[10] FRANCESCHI SD, 2003, APPL PHYS LETT, V83, P344

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