MOS memory structures by very-low-energy-implanted Si in thin SiO2

被引：34

作者：

Dimitrakis, P ^{[1
]}

Kapetanakis, E

Normand, P

Skarlatos, D

Tsoukalas, D

Beltsios, K

Claverie, A

Benassayag, G

Bonafos, C

Chassaing, D

Carrada, M

Soncini, V

机构：

[1] NCSR Demokritos, IMEL, Aghia Paraskevi 15310, Greece

[2] Univ Ionnina, Mat Sci & Technol Dept, Ioannina 45110, Greece

[3] CNRS, CEMES, F-31055 Toulouse, France

[4] ST Cent R&D Agrate, I-20041 Agrate Brianza, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 101卷 / 1-3期

关键词：

Si; nanocrystals; ion implantation; memory;

D O I：

10.1016/S0921-5107(02)00688-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current-voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65-2 keV), annealing temperature (950-1050 degreesC) and injection oxide characteristics on charge injection and storage are reported. It is shown that the implantation energy allows for a fine control of the memory window characteristics, and various device options are possible including memory operation with charge injection at low gate voltages. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：14 / 18

页数：5

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