SiON/Ta2O5/TiN gate-stack transistor with 1.8nm equivalent SiO2 thickness

被引：36

作者：

Park, DG ^{[1
]}

Lu, Q ^{[1
]}

King, TJ ^{[1
]}

Hu, CM ^{[1
]}

Kalnitsky, A ^{[1
]}

Tay, SP ^{[1
]}

Cheng, CC ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiON/Ta2O5 stacked gate dielectric exhibits 3-5 orders smaller leakage current than SiO2 at 1.8nm, while the transistor characteristics such as mobility, I-d-V-g, and I-d-V-d, are similar to those of SiO2 transistor. N-channel MOSFET with equivalent SiO2 thickness down to 1.8nm (1.4nm equivalent due to elimination of poly-Si depletion) is demonstrated. Process effects are also studied for optimum process condition.

引用

页码：381 / 384

页数：4

共 10 条

[1] MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages [J].

Chen, K ;

Wann, HC ;

Dunster, J ;

Ko, PK ;

Hu, CM ;

Yoshida, M .

SOLID-STATE ELECTRONICS, 1996, 39 (10) :1515-1518

[2] EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS [J].

HAN, LK ;

YOON, GW ;

KWONG, DL ;

MATHEWS, VK ;

FAZAN, PC .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) :280-282

[3]

KWON KW, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P835, DOI 10.1109/IEDM.1994.383295

[4] Electrical characterization of CVD TiN upper electrode for Ta2O5 capacitor [J].

Lee, MB ;

Lee, HD ;

Park, BL ;

Chung, UI ;

Koh, YB ;

Lee, MY .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :683-686

[5]

Momiyama Y., 1997, S VLSI TECHN, P135

[6]

Ohji Y, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P111, DOI 10.1109/IEDM.1995.497194

[7]

SCHUEGRAF KF, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P609, DOI 10.1109/IEDM.1994.383336

[8] A new post-deposition annealing method using furnace N2O for the reduction of leakage current of CVD Ta2O5 storage capacitors [J].

Sun, SC ;

Chen, TF .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :687-690

[9] CMOS devices below 0.1μm:: How high will performance go? [J].

Taur, Y ;

Nowak, EJ .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :215-218

[10]

Yu B., 1997, INT SEM DEV RES S, P623

← 1 →