High speed anisotropic dry etching of CoNbZr for next generation magnetic recording

被引：15

作者：

Andriesse, MS ^{[1
]}

Zijlstra, T ^{[1
]}

van der Drift, E ^{[1
]}

机构：

[1] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, NL-2600 GB Delft, Netherlands

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期

关键词：

D O I：

10.1116/1.1313577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dry etch behavior of CoNbZr in an inductively coupled plasma of Cl-2/BCl3 at elevated temperatures has been studied. Etch behavior of the alloy is ion induced with a strong chemical enhancement. The etch rate shows nonstoichiometric behavior when compared with the constituting elements. The increase by about 35% is attributed to interactive effects. A further enhancement up to about 40% is obtained under simultaneous exposure of deep ultraviolet irradiation. A fast anisotropic dry patterning process for CoNbZr has been developed, with etch rates up to 300 nm/min at 220 degreesC. (C) 2000 American Vacuum Society. [S0734-211X(00)00806-4].

引用

页码：3462 / 3466

页数：5

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