Random temporal fluctuations of localized-state energies

被引：4

作者：

Arkhipov, VI

Adriaenssens, GJ

机构：

[1] Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Louvain, Belgium

[2] Moscow Engn Phys Inst, Moscow 115409, Russia

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

random fluctuation; energy level; a-Si : H;

D O I：

10.1016/S0022-3093(98)00032-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Random fluctuations of the energy level of localized states in the bandgap of amorphous semiconductors can affect the release of carriers trapped in gap states, and therefore may affect all experiments or processes where such release plays a role. Since the amplitude of the fluctuations is an important factor, and long trapping times are correlated with large amplitudes, the effects are strongest at low temperatures and for the deepest states. A model based on a-Si:H is used to illustrate the concepts. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：166 / 171

页数：6

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