Microchip vertical external cavity surface emitting lasers

被引：36

作者：

Hastie, JE ^{[1
]}

Hopkins, JM

Jeon, CW

Calvez, S

Burns, D

Dawson, MD

Abram, R

Riis, E

Ferguson, AI

Alford, WJ

Raymond, TD

Allerman, AA

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

[2] Univ Strathclyde, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 18期

关键词：

D O I：

10.1049/el:20030839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic vertical external cavity surface emitting lasers of cavity mode volume <1 mm(3) have been fabricated in the 850 and 980 nm wavelength range. Pump-limited output power >350 mW in a TEM00 mode was obtained at 850 nm. Output power >2.5 W was obtained at 980 nm.

引用

页码：1324 / 1326

页数：3

共 7 条

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