Actively stabilized single-frequency vertical-external-cavity AlGaAs laser

被引：76

作者：

Holm, MA ^{[1
]}

Ferguson, DBAI ^{[1
]}

Dawson, MD ^{[1
]}

机构：

[1] Univ Strathclyde, Inst Photon, Wolfson Ctr, Glasgow G4 0NW, Lanark, Scotland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 12期

关键词：

diode pumped; semiconductor lasers; single frequency; VCSEL; VECSEL;

D O I：

10.1109/68.806843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on actively stabilized single-frequency operation of a vertical-external-cavity surface-emitting semiconductor laser (VECSEL), The VECSEL was locked to a 300-MHz reference cavity allowing a relative frequency measurement that indicated a laser linewidth of 3 kHz, Coarse tuning over an 8.5-nm range was achieved, with fine tuning over 250 MHz. The laser produced up to 42 mW of output power in single-frequency operation.

引用

页码：1551 / 1553

页数：3

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