Single-angled-facet laser diode for widely tunable external cavity semiconductor lasers with high spectral purity

被引：15

作者：

Heim, PJS

Fan, ZF

Cho, SH

Nam, K

Dagenais, M

Johnson, FG

Leavitt, R

机构：

[1] LAB PHYS SCI,COLLEGE PK,MD 20740

[2] ARMY RES LAB,ADELPHI,MD 20783

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 16期

关键词：

semiconductor junction lasers; external cavity lasers;

D O I：

10.1049/el:19970911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

External cavity semiconductor lasers are demonstrated using a single-angled-facet semiconductor laser diode that does not require anti-reflection coating. A wide tuning bandwidth (7%, lambda = 980nm), large side-mode suppression ratio (50dB, lambda = 1590nm), narrow linewidth (50rHz), and high output power (13.5mW) are achieved with conventional external cavity configurations.

引用

收藏

页码：1387 / 1389

页数：3

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