IIB-4 CURVED AND TAPERED WAVE-GUIDE MODE-LOCKED INGAAS/ALGAAS SEMICONDUCTOR-LASERS FABRICATED BY IMPURITY-INDUCED DISORDERING

被引：10

作者：

HELKEY, R ^{[1
]}

ZOU, WX ^{[1
]}

MAR, A ^{[1
]}

YOUNG, DB ^{[1
]}

BROWERS, J ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,SANTA BARBARA,CA 93106

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期

关键词：

D O I：

10.1109/16.239774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

收藏

页码：2107 / 2107

页数：1

相关论文

共 5 条

[1] HIGH PEAK POWER PICOSECOND PULSE GENERATION FROM ALGAAS EXTERNAL CAVITY MODE-LOCKED SEMICONDUCTOR-LASER AND TRAVELING-WAVE AMPLIFIER
DELFYETT, PJ
LEE, CH
ALPHONSE, GA
CONNOLLY, JC
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 971 - 973
[2] SUPPRESSION OF MULTIPLE PULSE FORMATION IN EXTERNAL-CAVITY MODE-LOCKED SEMICONDUCTOR-LASERS USING INTRAWAVEGUIDE SATURABLE ABSORBERS
DERICKSON, DJ
HELKEY, RJ
MAR, A
KARIN, JR
BOWERS, JE
THORNTON, RL
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (04) : 333 - 335
[3] CHIRPED GRATINGS FOR DFB LASER-DIODES USING BENT WAVE-GUIDES
HILLMER, H
MAGARI, K
SUZUKI, Y
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (01) : 10 - 12
[4] A GAINASP/INP TAPERED-WAVE-GUIDE SEMICONDUCTOR-LASER AMPLIFIER INTEGRATED WITH A 1.5 MU-M DISTRIBUTED FEEDBACK LASER
YAZAKI, PA
KOMORI, K
BENDELLI, G
ARAI, S
SUEMATSU, Y
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (12) : 1060 - 1063
[5] ULTRALOW THRESHOLD STRAINED INGAAS-GAAS QUANTUM-WELL LASERS BY IMPURITY-INDUCED DISORDERING
ZOU, WX
MERZ, JL
FU, RJ
HONG, CS
[J]. ELECTRONICS LETTERS, 1991, 27 (14) : 1241 - 1243