Design of a nanoscale silicon laser

被引:29
作者
Jaiswal, SL [1 ]
Simpson, JT
Withrow, SP
White, CW
Norris, PM
机构
[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
[2] Univ Virginia, Charlottesville, VA USA
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 77卷 / 01期
关键词
D O I
10.1007/s00339-003-2093-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The recent observation of optical gain from silicon nanocrystals embedded in SiO2 opens an opportunity to develop a nanoscale silicon-based laser. However, the challenge remains to design and develop a laser architecture using CMOS-compatible materials. In this paper we present two designs for a waveguide laser in which silicon nanocrystals embedded in SiO2 are used as the optical gain media. One design employs a SiO2 membrane containing encapsulated Si nanocrystals. Preliminary calculations given here show that a highly resonant laser cavity can be produced in a SiO2 membrane using sub-wavelenath structures. This photonic crystal architecture, used to guide and contain the light, can be combined with a gain medium of optically active Si nanocrystals synthesized in the SiO2 membrane using ion implantation/thermal annealing to produce a Si-based laser. The laser cavity dimensions can be matched to the near-infrared wavelengths where optical gain has been observed from Si nanocrystals. The second design utilizes silicon nanocrystals embedded in a distributed-feedback laser cavity fabricated in SiO2. Lasing action over a broad wavelength range centered at similar to 770 nm should be possible in both of these configurations.
引用
收藏
页码:57 / 61
页数:5
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