Processor-based built-in self-test for embedded DRAM

被引:54
作者
Dreibelbis, J [1 ]
Barth, J [1 ]
Kalter, H [1 ]
Kho, R [1 ]
机构
[1] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA
关键词
built-in self test (BIST); BIST architecture; BIST sequencer; DRAM macro; embedded DRAM; programmable BIST; redundancy allocation; test flow for embedded DRAM; two-dimensional redundancy;
D O I
10.1109/4.726568
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A built-in self-test engine and test methodology have been del eloped for testing a family of high-bandwidth, high-density DRAM micros. The DRAM macros [1] range in size from 256 x 16 x 128 to 2 K x: 16 x 256 (Word x Bit x Data) and are targeted for embedded applications in application-specific integrated circuit designs. The processor-based test engine, with two separate instruction storage memories, combines with flexible address, data, and clock generators to provide DRAM highperformance ac testing using a minimum of dedicated test pins. Test results are compressed through on-macro, two-dimensional, redundancy allocation logic to provide direct programming information for the fuser via a serial scan port. The design is architected for reuse on future DRAM-generation subarrays and can be adapted to any number of address or data-pin configurations.
引用
收藏
页码:1731 / 1740
页数:10
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