A comparative study of single-electron memories

被引：41

作者：

Wasshuber, C ^{[1
]}

Kosina, H ^{[1
]}

Selberherr, S ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 11期

关键词：

Coulomb blockade; memory; quantum dot; single-electron; tunneling;

D O I：

10.1109/16.726659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study different memory cell designs and compare their advantages and disadvantages from an engineering point of view. We look at operational stability as a function of temperature and stray charge (random background charge), and discuss the issue of reliable mass production. We conclude that memories seem to be one of the most promising large scale single-electron tunnel applications, that lie, particularly when granular films are used, already in the range of today's process technology.

引用

页码：2365 / 2371

页数：7

共 21 条

[1]

AMAKAWA S, 1996, ELECTROCHEM SOC M AB, V962, P572

[2]

AVERIN DV, 1992, NATO ADV SCI I B-PHY, V294, P311

[3]

CHOU SY, 1996, P NAN MES SYST SANT, P38

[4] A POSSIBLE EXPLANATION OF THE INCREASE OF THE ELECTRICAL RESISTANCE OF THIN METAL FILMS AT LOW TEMPERATURES AND SMALL FIELD STRENGTHS [J].

GORTER, CJ .

PHYSICA, 1951, 17 (08) :777-780

[5] A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel [J].

Guo, LJ ;

Leobandung, E ;

Chou, SY .

APPLIED PHYSICS LETTERS, 1997, 70 (07) :850-852

[6] Verify: Key to the stable single-electron-memory operation [J].

Ishii, T ;

Yano, K ;

Sano, T ;

Mine, T ;

Murai, F ;

Seki, K .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :171-174

[7] POSSIBLE PERFORMANCE OF CAPACITIVELY COUPLED SINGLE-ELECTRON TRANSISTORS IN DIGITAL CIRCUITS [J].

KOROTKOV, AN ;

CHEN, RH ;

LIKHAREV, KK .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2520-2530

[8] Instability of single-electron memory at low temperatures in Al/AlOx/Al structures [J].

Krupenin, VA ;

Lotkhov, SV ;

Presnov, DE .

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 1997, 84 (01) :190-196

[9]

LENT CS, 1992, INT WORKSH COMP EL M, P163

[10]

LIKHAREV K, 1996, ELECTROCHM SOC M ABS, V962, P563

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