共 20 条
High mobility top-gate and dual-gate polymer thin-film transistors based on diketopyrrolopyrrole-naphthalene copolymer
被引:47
作者:

Ha, Tae-Jun
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

Sonar, Prashant
论文数: 0 引用数: 0
h-index: 0
机构:
Inst Mat Res & Engn, Singapore 117602, Singapore Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

Dodabalapur, Ananth
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
机构:
[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[2] Inst Mat Res & Engn, Singapore 117602, Singapore
关键词:
CHARGE-TRANSPORT;
D O I:
10.1063/1.3601928
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
In this letter, the performance characteristics of top-gate and dual-gate thin-film transistors (TFTs) with active semiconductor layers consisting of diketopyrrolopyrrole-naphthalene copolymer are described. Optimized top-gate TFTs possess mobilities of up to 1 cm(2)/V s with low contact resistance and reduced hysteresis in air. Dual-gate devices possess higher drive currents as well as improved subthreshold and above threshold characteristics compared to single-gate devices. We also describe the reasons that dual-gate devices result in improved performance. The good stability of this polymer combined with their promising electrical properties make this material a very promising semiconductor for printable electronics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601928]
引用
收藏
页数:3
相关论文
共 20 条
[1]
Organic field-effect transistors with high mobility based on copper phthalocyanine
[J].
Bao, Z
;
Lovinger, AJ
;
Dodabalapur, A
.
APPLIED PHYSICS LETTERS,
1996, 69 (20)
:3066-3068

Bao, Z
论文数: 0 引用数: 0
h-index: 0
机构: Bell Laboratories, Lucent Technologies, Murray Hill

Lovinger, AJ
论文数: 0 引用数: 0
h-index: 0
机构: Bell Laboratories, Lucent Technologies, Murray Hill

Dodabalapur, A
论文数: 0 引用数: 0
h-index: 0
机构: Bell Laboratories, Lucent Technologies, Murray Hill
[2]
Molecular Self-Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin-Film Transistor Applications
[J].
DiBenedetto, Sara A.
;
Facchetti, Antonio
;
Ratner, Mark A.
;
Marks, Tobin J.
.
ADVANCED MATERIALS,
2009, 21 (14-15)
:1407-1433

DiBenedetto, Sara A.
论文数: 0 引用数: 0
h-index: 0
机构:
Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

论文数: 引用数:
h-index:
机构:

Ratner, Mark A.
论文数: 0 引用数: 0
h-index: 0
机构:
Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

Marks, Tobin J.
论文数: 0 引用数: 0
h-index: 0
机构:
Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[3]
Dual-gate organic thin-film transistors
[J].
Gelinck, GH
;
van Veenendaal, E
;
Coehoorn, R
.
APPLIED PHYSICS LETTERS,
2005, 87 (07)

Gelinck, GH
论文数: 0 引用数: 0
h-index: 0
机构: Philips Technol Incubator, Polymer Vis, NL-5656 AE Eindhoven, Netherlands

van Veenendaal, E
论文数: 0 引用数: 0
h-index: 0
机构: Philips Technol Incubator, Polymer Vis, NL-5656 AE Eindhoven, Netherlands

Coehoorn, R
论文数: 0 引用数: 0
h-index: 0
机构: Philips Technol Incubator, Polymer Vis, NL-5656 AE Eindhoven, Netherlands
[4]
Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes
[J].
Gundlach, DJ
;
Jia, LL
;
Jackson, TN
.
IEEE ELECTRON DEVICE LETTERS,
2001, 22 (12)
:571-573

Gundlach, DJ
论文数: 0 引用数: 0
h-index: 0
机构:
Penn State Univ, Ctr Thin Film Devices & Elect Mat, University Pk, PA 16801 USA Penn State Univ, Ctr Thin Film Devices & Elect Mat, University Pk, PA 16801 USA

Jia, LL
论文数: 0 引用数: 0
h-index: 0
机构: Penn State Univ, Ctr Thin Film Devices & Elect Mat, University Pk, PA 16801 USA

Jackson, TN
论文数: 0 引用数: 0
h-index: 0
机构: Penn State Univ, Ctr Thin Film Devices & Elect Mat, University Pk, PA 16801 USA
[5]
Undoped polythiophene field-effect transistors with mobility of 1 cm2 V-1 s-1
[J].
Hamadani, B. H.
;
Gundlach, D. J.
;
McCulloch, I.
;
Heeney, M.
.
APPLIED PHYSICS LETTERS,
2007, 91 (24)

Hamadani, B. H.
论文数: 0 引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA

Gundlach, D. J.
论文数: 0 引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA

McCulloch, I.
论文数: 0 引用数: 0
h-index: 0
机构:
Merck Chem, Chilworth Sci Pk, Southampton S016 7QD, Hants, England NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA

Heeney, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Merck Chem, Chilworth Sci Pk, Southampton S016 7QD, Hants, England NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA
[6]
Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods
[J].
Kalb, Wolfgang L.
;
Batlogg, Bertram
.
PHYSICAL REVIEW B,
2010, 81 (03)

Kalb, Wolfgang L.
论文数: 0 引用数: 0
h-index: 0
机构:
ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

Batlogg, Bertram
论文数: 0 引用数: 0
h-index: 0
机构:
ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[7]
Novel organic inverters with dual-gate pentacene thin-film transistor
[J].
Koo, Jae Bon
;
Ku, Chan Hoe
;
Lim, Jung Wook
;
Kim, Seong Hyun
.
ORGANIC ELECTRONICS,
2007, 8 (05)
:552-558

Koo, Jae Bon
论文数: 0 引用数: 0
h-index: 0
机构:
Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305700, South Korea Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305700, South Korea

Ku, Chan Hoe
论文数: 0 引用数: 0
h-index: 0
机构: Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305700, South Korea

Lim, Jung Wook
论文数: 0 引用数: 0
h-index: 0
机构: Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305700, South Korea

Kim, Seong Hyun
论文数: 0 引用数: 0
h-index: 0
机构: Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305700, South Korea
[8]
Device characteristics of polymer dual-gate field-effect transistors
[J].
Maddalena, F.
;
Spijkman, M.
;
Brondijk, J. J.
;
Fonteijn, P.
;
Brouwer, F.
;
Hummelen, J. C.
;
de Leeuw, D. M.
;
Blom, P. W. M.
;
de Boer, B.
.
ORGANIC ELECTRONICS,
2008, 9 (05)
:839-846

Maddalena, F.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

Spijkman, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

Brondijk, J. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

Fonteijn, P.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

Brouwer, F.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

Hummelen, J. C.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

de Leeuw, D. M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

Blom, P. W. M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

de Boer, B.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
[9]
Liquid-crystalline semiconducting polymers with high charge-carrier mobility
[J].
Mcculloch, I
;
Heeney, M
;
Bailey, C
;
Genevicius, K
;
Macdonald, I
;
Shkunov, M
;
Sparrowe, D
;
Tierney, S
;
Wagner, R
;
Zhang, WM
;
Chabinyc, ML
;
Kline, RJ
;
Mcgehee, MD
;
Toney, MF
.
NATURE MATERIALS,
2006, 5 (04)
:328-333

Mcculloch, I
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Heeney, M
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Bailey, C
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Genevicius, K
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Macdonald, I
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Shkunov, M
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Sparrowe, D
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Tierney, S
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Wagner, R
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Zhang, WM
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Chabinyc, ML
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Kline, RJ
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Mcgehee, MD
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England

Toney, MF
论文数: 0 引用数: 0
h-index: 0
机构: Merck Chem, Southampton SO16 7QD, Hants, England
[10]
Improved organic thin-film transistor performance using novel self-assembled monolayers - art. no. 073505
[J].
McDowell, M
;
Hill, IG
;
McDermott, JE
;
Bernasek, SL
;
Schwartz, J
.
APPLIED PHYSICS LETTERS,
2006, 88 (07)

McDowell, M
论文数: 0 引用数: 0
h-index: 0
机构:
Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada

Hill, IG
论文数: 0 引用数: 0
h-index: 0
机构: Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada

McDermott, JE
论文数: 0 引用数: 0
h-index: 0
机构: Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada

Bernasek, SL
论文数: 0 引用数: 0
h-index: 0
机构: Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada

Schwartz, J
论文数: 0 引用数: 0
h-index: 0
机构: Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada