Thermal and nonthermal melting of gallium arsenide after femtosecond laser excitation

被引:157
作者
Sokolowski-Tinten, K [1 ]
Bialkowski, J
Boing, M
Cavalleri, A
von der Linde, D
机构
[1] Univ GHS Essen, Inst Laser & Plasmaphys, D-45117 Essen, Germany
[2] Univ Pavia, Dipartimento Elettr, INFM, I-27100 Pavia, Italy
关键词
D O I
10.1103/PhysRevB.58.R11805
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermal- and nonthermal melting in gallium arsenide after femtosecond laser excitation has been investigated by means of time resolved microscopy. Electronic melting within a few hundred femtoseconds is observed for rather strong excitation and the data reveal a distinct threshold fluence of 150 mJ/cm(2) for this nonthermal process. Below that threshold melting occurs on a 100 ps time scale and is of thermal nature. Using a simple numerical model we describe this type of the phase transition as heterogeneous melting under strongly overheated conditions. [S0163-1829(98)51142-3].
引用
收藏
页码:11805 / 11808
页数:4
相关论文
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