Thermal and nonthermal melting of gallium arsenide after femtosecond laser excitation

被引：157

作者：

Sokolowski-Tinten, K ^{[1
]}

Bialkowski, J

Boing, M

Cavalleri, A

von der Linde, D

机构：

[1] Univ GHS Essen, Inst Laser & Plasmaphys, D-45117 Essen, Germany

[2] Univ Pavia, Dipartimento Elettr, INFM, I-27100 Pavia, Italy

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.58.R11805

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal- and nonthermal melting in gallium arsenide after femtosecond laser excitation has been investigated by means of time resolved microscopy. Electronic melting within a few hundred femtoseconds is observed for rather strong excitation and the data reveal a distinct threshold fluence of 150 mJ/cm(2) for this nonthermal process. Below that threshold melting occurs on a 100 ps time scale and is of thermal nature. Using a simple numerical model we describe this type of the phase transition as heterogeneous melting under strongly overheated conditions. [S0163-1829(98)51142-3].

引用

页码：11805 / 11808

页数：4

共 21 条

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