Thermal and nonthermal melting of gallium arsenide after femtosecond laser excitation

被引：157

作者：

Sokolowski-Tinten, K ^{[1
]}

Bialkowski, J

Boing, M

Cavalleri, A

von der Linde, D

机构：

[1] Univ GHS Essen, Inst Laser & Plasmaphys, D-45117 Essen, Germany

[2] Univ Pavia, Dipartimento Elettr, INFM, I-27100 Pavia, Italy

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.58.R11805

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal- and nonthermal melting in gallium arsenide after femtosecond laser excitation has been investigated by means of time resolved microscopy. Electronic melting within a few hundred femtoseconds is observed for rather strong excitation and the data reveal a distinct threshold fluence of 150 mJ/cm(2) for this nonthermal process. Below that threshold melting occurs on a 100 ps time scale and is of thermal nature. Using a simple numerical model we describe this type of the phase transition as heterogeneous melting under strongly overheated conditions. [S0163-1829(98)51142-3].

引用

页码：11805 / 11808

页数：4

共 21 条

[11] ULTRAFAST ELECTRONIC DISORDERING DURING FEMTOSECOND LASER MELTING OF GAAS
SAETA, P
WANG, JK
SIEGAL, Y
BLOEMBERGEN, N
MAZUR, E
[J]. PHYSICAL REVIEW LETTERS, 1991, 67 (08) : 1023 - 1026
[12] TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF FEMTOSECOND-OPTICAL-PULSE INDUCED PHASE-TRANSITIONS IN SILICON
SHANK, CV
YEN, R
HIRLIMANN, C
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 454 - 457
[13] Phase transformations of an InSb surface induced by strong femtosecond laser pulses
Shumay, IL
Hofer, U
[J]. PHYSICAL REVIEW B, 1996, 53 (23): : 15878 - 15884
[14] Ab initio molecular dynamics simulation of laser melting of silicon
Silvestrelli, PL
Alavi, A
Parrinello, M
Frenkel, D
[J]. PHYSICAL REVIEW LETTERS, 1996, 77 (15) : 3149 - 3152
[15] 2 DISTINCT TRANSITIONS IN ULTRAFAST SOLID LIQUID-PHASE TRANSFORMATIONS OF GAAS
SOKOLOWSKITINTEN, K
SCHULZ, H
BIALKOWSKI, J
VONDERLINDE, D
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (03): : 227 - 234
[16] ULTRAFAST LASER-INDUCED ORDER-DISORDER TRANSITIONS IN SEMICONDUCTORS
SOKOLOWSKITINTEN, K
BIALKOWSKI, J
VONDERLINDE, D
[J]. PHYSICAL REVIEW B, 1995, 51 (20): : 14186 - 14198
[17] SPAEPEN F, 1985, LASER ANNEALING SEMI, P15
[18] THEORY FOR THE INSTABILITY OF THE DIAMOND STRUCTURE OF SI, GE, AND C INDUCED BY A DENSE ELECTRON-HOLE PLASMA
STAMPFLI, P
BENNEMANN, KH
[J]. PHYSICAL REVIEW B, 1990, 42 (11): : 7163 - 7173
[19] TIME-RESOLVED STUDY OF LASER-INDUCED DISORDER OF SI SURFACES
TOM, HWK
AUMILLER, GD
BRITOCRUZ, CH
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (14) : 1438 - 1441
[20] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING
VANVECHTEN, JA
TSU, R
SARIS, FW
[J]. PHYSICS LETTERS A, 1979, 74 (06) : 422 - 426

← 1 2 3 →