Erbium luminescence in sol-gel derived oxide glass films

被引:32
作者
Gaponenko, NV
Mudryi, AV
Sergeev, OV
Borisenko, VE
Stepanova, EA
Baran, AS
Rat'ko, AI
Pivin, JC
McGilp, JF
机构
[1] Belarusian State Univ Informat & Radioelect, Minsk 220027, BELARUS
[2] Byelarussian Acad Sci, Inst Gen & Inorgan Chem, Minsk 220027, BELARUS
[3] Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France
[4] Univ Dublin Trinity Coll, Dublin 2, Ireland
关键词
photoluminescence; sol-gel; ion;
D O I
10.1016/S1386-1425(98)00135-8
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Sol-gel derived Al2O3, SiO2, TiO2 and In2O, films, containing about 10 wt.% Er2O3 have been fabricated and the erbium PL (photoluminescence) in the region of 1.53 mu m has been investigated. In contrast to erbium implanted films, a strong influence of host matrix local environment on the electronic structure of Er ions was observed in the Er PL. The dependence of the Er PL on the chemical composition of sol-gel derived matrix, and its change with temperature, are reported. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:2177 / 2182
页数:6
相关论文
共 24 条
  • [1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [2] Porous silicon: From luminescence to LEDs
    Collins, RT
    Fauchet, PM
    Tischler, MA
    [J]. PHYSICS TODAY, 1997, 50 (01) : 24 - 31
  • [3] DOOLITTLE LR, 1985, NUCL INSTRUM METH B, V49, P334
  • [4] Strong 1.54 mu m luminescence from erbium-doped porous silicon
    Dorofeev, A
    Bachilo, E
    Bondarenko, V
    Gaponenko, N
    Kazuchits, N
    Leshok, A
    Troyanova, G
    Vorozov, N
    Borisenko, V
    Gnaser, H
    Bock, W
    Becker, P
    Oechsner, H
    [J]. THIN SOLID FILMS, 1996, 276 (1-2) : 171 - 174
  • [5] ERBIUM LUMINESCENCE IN POROUS SILICON DOPED FROM SPIN-ON FILMS
    DOROFEEV, AM
    GAPONENKO, NV
    BONDARENKO, VP
    BACHILO, EE
    KAZUCHITS, NM
    LESHOK, AA
    TROYANOVA, GN
    VOROSOV, NN
    BORISENKO, VE
    GNASER, H
    BOCK, W
    BECKER, P
    OECHSNER, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) : 2679 - 2683
  • [6] Erbium and terbium photoluminescence in silica sol-gel films on porous alumina
    Gaponenko, NV
    Parkun, VM
    Katernoga, OS
    Borisenko, VE
    Mudryi, AV
    Stepanova, EA
    Ratko, AI
    Cavanagh, M
    OKelly, B
    McGilp, JF
    [J]. THIN SOLID FILMS, 1997, 297 (1-2) : 202 - 206
  • [7] GAPONENKO NV, 1998, IN PRESS INORG MAT
  • [8] TIME-RESOLVED SPECTROSCOPY OF VISIBLY EMITTING POROUS SILICON
    GAPONENKO, SV
    GERMANENKO, IN
    PETROV, EP
    STUPAK, AP
    BONDARENKO, VP
    DOROFEEV, AM
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (01) : 85 - 87
  • [9] Hommerich U, 1996, APPL PHYS LETT, V68, P1951, DOI 10.1063/1.115636
  • [10] ELECTROCHEMICAL ER DOPING OF POROUS SILICON AND ITS ROOM-TEMPERATURE LUMINESCENCE AT SIMILAR-TO-1.54 MU-M
    KIMURA, T
    YOKOI, A
    HORIGUCHI, H
    SAITO, R
    IKOMA, T
    SATO, A
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (08) : 983 - 985