Electron and hole addition energies in PbSe quantum dots

被引：18

作者：

An, J. M. ^{[1
]}

Franceschetti, A. ^{[1
]}

Zunger, A. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.76.045401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate electron and hole addition energies of PbSe quantum dots using a pseudopotential configuration-interaction approach. We find that (i) the addition energies are nearly constant for the first eight carriers occupying the S-like shell. (ii) The charging sequence of the first eight carriers is non-Aufbau, but filling of the P-like single-particle states takes place only after the S-like states are filled. (iii) The charging spectrum shows bunching-up of all lines as the dielectric constant epsilon(out) of the material surrounding the dot increases. At the same time, the addition energies are significantly reduced. (iv) The calculated optical gap shows a rather weak dependence on epsilon(out), reflecting a cancellation between electron-hole interaction energies and surface polarization self-energies.

引用

收藏

页数：7

相关论文

共 24 条

[11] Screening of point charges in Si quantum dots [J].

Franceschetti, A ;

Troparevsky, MC .

PHYSICAL REVIEW B, 2005, 72 (16)

[12] Many-body pseudopotential theory of excitons in InP and CdSe quantum dots [J].

Franceschetti, A ;

Fu, H ;

Wang, LW ;

Zunger, A .

PHYSICAL REVIEW B, 1999, 60 (03) :1819-1829

[13] Optical transitions in artificial few-electron atoms strongly confined inside ZnO nanocrystals [J].

Germeau, A ;

Roest, AL ;

Vanmaekelbergh, D ;

Allan, G ;

Delerue, C ;

Meulenkamp, EA .

PHYSICAL REVIEW LETTERS, 2003, 90 (09) :4

[14] Time-resolved intraband relaxation of strongly confined electrons and holes in colloidal PbSe nanocrystals [J].

Harbold, JM ;

Du, H ;

Krauss, TD ;

Cho, KS ;

Murray, CB ;

Wise, FW .

PHYSICAL REVIEW B, 2005, 72 (19)

[15] Density of states measured by scanning-tunneling spectroscopy sheds new light on the optical transitions in PbSe nanocrystals [J].

Liljeroth, P ;

van Emmichoven, PAZ ;

Hickey, SG ;

Weller, H ;

Grandidier, B ;

Allan, G ;

Vanmaekelbergh, D .

PHYSICAL REVIEW LETTERS, 2005, 95 (08)

[16] Staircase in the electron mobility of a ZnO quantum dot assembly due to shell filling [J].

Roest, AL ;

Kelly, JJ ;

Vanmaekelbergh, D ;

Meulenkamp, EA .

PHYSICAL REVIEW LETTERS, 2002, 89 (03) :368011-368014

[17] Breaking the phonon bottleneck in semiconductor nanocrystals via multiphonon emission induced by intrinsic nonadiabatic interactions [J].

Schaller, RD ;

Pietryga, JM ;

Goupalov, SV ;

Petruska, MA ;

Ivanov, SA ;

Klimov, VI .

PHYSICAL REVIEW LETTERS, 2005, 95 (19)

[18] High efficiency carrier multiplication in PbSe nanocrystals: Implications for solar energy conversion [J].

Schaller, RD ;

Klimov, VI .

PHYSICAL REVIEW LETTERS, 2004, 92 (18) :186601-1

[19] Comment on "Staircase in the electron mobility of a ZnO quantum dot assembly due to shell filling" and "Optical transitions in artificial few-electron atoms strongly confined inside ZnO nanocrystals" [J].

Shim, M ;

Guyot-Sionnest, P .

PHYSICAL REVIEW LETTERS, 2003, 91 (16)

[20] Charging effects in a CdSe nanotetrapod [J].

Wang, LW .

JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (49) :23330-23335