Electrical and optical proprieties of photodiodes based on ZnSe material

被引：19

作者：

Bouhdada, A

Hanzaz, M

Vigué, F

Faurie, JP

机构：

[1] Univ Hassan II, Fac Sci Ain Chock, Lab Phys Mat & Microelect, Casablanca, Morocco

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.1589191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on the spectral response and I-V measurements, the physical mechanism responsible for electrical conduction and optical response have been suggested. The Schottky diode response remains quite flat for energies above the gap, an advantage in comparison with the p-i-n photodiode. The obtained result showed a high leakage resistance for Schottky photodiode explained by the presence of the defect at the metal/semiconductor interface. (C) 2003 American Institute of Physics.

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页码：171 / 173

页数：3

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