学术探索
学术期刊
新闻热点
数据分析
智能评审

High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range

被引：19
作者：
Vigué, F
de Mierry, P
Faurie, JP
Monroy, E
Calle, F
Muñoz, E
机构：
[1] CNRS, CRHEA, F-06560 Valbonne, France
[2] Univ Politecn Madrid, ETSI Telecommun, Dept Ingn Elect, E-28040 Madrid, Spain
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 09期
关键词：
D O I：
10.1049/el:20000600
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A characterisation of ZnSe-based Schottky barrier photodetectors grown by molecular beam epitaxy is presented. High quality diodes exhibiting a high responsivity of 0.01 A/W at 455nm and a sharp cut-off of three to four orders of magnitude have been fabricated. A detectivity of 1.4 x 10(10) mHz(1/2)W(-1) has been obtained for a structure with a 5mm(2) area operating at -3.5V bias. These results highlight the potential of ZnSe in blue and near-ultraviolet light detection.
引用
收藏
页码：826 / 827
页数：2
相关论文
共 9 条
[1]   Schottky barrier detectors on GaN for visible-blind ultraviolet detection [J].
Chen, Q ;
Yang, JW ;
Osinsky, A ;
Gangopadhyay, S ;
Lim, B ;
Anwar, MZ ;
Khan, MA ;
Kuksenkov, D ;
Temkin, H .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2277-2279
[2]   ZnSe-based MBE-grown photodiodes [J].
Gerhard, A ;
Nurnberger, J ;
Schull, K ;
Hock, V ;
Schumacher, C ;
Ehinger, M ;
Faschinger, W .
JOURNAL OF CRYSTAL GROWTH, 1998, 184 :1319-1323
[3]   Semiconductor near-ultraviolet photoelectronics [J].
Goldberg, YA .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (07) :R41-R60
[4]   Nitrogen ion implanted ZnSe/GaAs p-i-n photodetectors [J].
Hong, H ;
Anderson, WA ;
Haetty, J ;
Lee, EH ;
Chang, HC ;
Na, MH ;
Luo, H ;
Petrou, A .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) :2328-2333
[5]   Cryogenic processed metal-semiconductor-metal (MSM) photodetectors on MBE grown ZnSe [J].
Hong, H ;
Anderson, WA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) :1127-1134
[6]   High UV/visible contrast photodiodes based on epitaxial lateral overgrown GaN layers [J].
Monroy, E ;
Calle, F ;
Muñoz, E ;
Beaumont, B ;
Omnes, F ;
Gibart, P .
ELECTRONICS LETTERS, 1999, 35 (17) :1488-1489
[7]   Semiconductor ultraviolet detectors [J].
Razeghi, M ;
Rogalski, A .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7433-7473
[8]  
SZE SM, 1981, PHYSICS SEMICONDUCTO
[9]   ZnSe-based Schottky barrier photodetectors [J].
Vigué, F ;
Tournié, E ;
Faurie, JP .
ELECTRONICS LETTERS, 2000, 36 (04) :352-354
1