InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

We describe the growth of InGaN quantum dots (QDs) by metalorganic vapor phase epitaxy. A thin InGaN epilayer is grown on a GaN buffer layer and then annealed at the growth temperature in molecular nitrogen inducing quantum dot formation. Microphotoluminescence studies of these QDs reveal sharp peaks with typical linewidths of similar to700 mueV at 4.2 K, the linewidth being limited by the spectral resolution. Time-resolved photoluminescence suggests that the excitons in these structures have lifetimes in excess of 2 ns at 4.2 K. (C) 2003 American Institute of Physics.