Narrow photoluminescence peaks from localized states in InGaN quantum dot structures

被引：131

作者：

Moriwaki, O ^{[1
]}

Someya, T ^{[1
]}

Tachibana, K ^{[1
]}

Ishida, S ^{[1
]}

Arakawa, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Adv Sci & Technol Res Ctr, Minato Ku, Tokyo 1068558, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 17期

关键词：

D O I：

10.1063/1.126346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microscopic photoluminescence spectra were measured for self-assembled InGaN quantum dots (QDs) grown by metalorganic chemical vapor deposition. A thin aluminum layer with 400 nm square apertures was formed on the sample surface to reduce the number of QDs measured. We observed very sharp peaks whose spectral linewidths were typically 170 mu eV at 3.5 K, the linewidth being limited by spectral resolution. Such sharp lines were not observed in similar experiments on a reference sample having single InGaN quantum well structure. These experimental results suggest that excitons are strongly confined in our InGaN QD structure. (C) 2000 American Institute of Physics. [S0003-6951(00)02817-5].

引用

页码：2361 / 2363

页数：3

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