Microscopic photoluminescence study of InAs single quantum dots grown on (100) GaAs

被引：17

作者：

Asaoka, K ^{[1
]}

Ohno, Y ^{[1
]}

Kishimoto, S ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 1B期

关键词：

MBE; Stranski-Krastanov mode; InAs QDs; mu-PL; FWHM; temperature dependence; dephasing;

D O I：

10.1143/JJAP.38.546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report ultranarrow (less than or equal to 60 mu eV) photoluminescence (PL) lines originating from single InAs quantum dots (QDs) sandwiched by Al0.35Ga0.65As barrier layers, demonstrating their delta-function-like density of states (DOS). The temperature dependence of the full-width at half maximum (FWHM) was studied between 10 and 90 K. It linearly increased with increasing temperature from 40 to 80 K (similar to 7 mu eV/K), suggesting the existence of an excitonic dephasing mechanism. Pure dephasing of excitons due to exciton-phonon interactions in acoustic phonon mode was suggested as a possible mechanism for the PL line broadening.

引用

页码：546 / 549

页数：4

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