Photoinduced infrared spectroscopy of bound-to-bound and bound-to-continuum transitions in SiGe/Si quantum wells

被引：5

作者：

Boucaud, P ^{[1
]}

Wu, L ^{[1
]}

Moussa, Z ^{[1
]}

Julien, FH ^{[1
]}

Lourtioz, JM ^{[1
]}

Sagnes, I ^{[1
]}

Campidelli, Y ^{[1
]}

Badoz, PA ^{[1
]}

机构：

[1] FRANCE TELECOM,CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1996年 / 19卷 / 01期

关键词：

D O I：

10.1006/spmi.1996.0005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Infrared spectroscopy of intersubband transitions in the valence band of undoped SiGe/Si quantum wells is presented. Optical pumping of interband transitions is used to generate carriers in the wells. The spectral features of bound-to-bound and bound-to-continuum transitions are analyzed and compared to those of GaAs quantum wells. In samples with only one heavy hole bound level, a ratio of 20:1 is observed between intersubband and free carrier absorption. Room temperature photo-induced absorption is only observed in samples with high germanium content (approximate to 50%). The feasibility of normal-incidence infrared modulators based on s-polarized intersubband absorption is also demonstrated. Resonant dispersion associated with intersubband transitions is evidenced. (C) 1996 Academic Press Limited

引用

页码：33 / 38

页数：6

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