Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate) gate dielectrics

被引：37

作者：

Kim, Se Hyun ^{[1
]}

Jang, Jaeyoung ^{[1
]}

Jeon, Hayoung ^{[1
]}

Yun, Won Min ^{[1
]}

Nam, Sooji ^{[1
]}

Park, Chan Eon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Polymer Res Inst, Dept Chem Engn, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 18期

关键词：

D O I：

10.1063/1.2924772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of hydroxyl groups on the hysteresis of pentacene field-effect transistors (FETs) and metal-insulator-semiconductor diodes containing poly(4-vinyl phenol) and poly(4-vinyl phenol-co-methyl methacrylate) (PVP-PMMA) gate dielectrics was investigated. The electrical characteristics and Fourier transform infrared spectroscopy measurements show that hysteresis is intimately related to the presence of free O-H groups in the polymer gate dielectrics. The methyl methacryl moieties in PVP-PMMA minimize residual water in the polymer and form hydrogen bonds with the hydroxyl groups, thus reducing the number of free O-H species. Therefore, pentacene FETs and inverters using PVP-PMMA gate dielectrics exhibit high, hysteresis-free performances. (C) 2008 American Institute of Physics.

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页数：3

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