Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric

被引:94
作者
Kim, Se Hyun [1 ]
Yang, Sang Yoon [1 ]
Shin, Kwonwoo [1 ]
Jeon, Hayoung [1 ]
Lee, Jong Won [1 ]
Hong, Ki Pyo [1 ]
Park, Chan Eon [1 ]
机构
[1] Pohang Univ Sci & Technol, Polymer Res Inst, Dept Chem Engn, Pohang 790784, South Korea
关键词
D O I
10.1063/1.2374864
中图分类号
O59 [应用物理学];
学科分类号
摘要
Low-operating-voltage organic field-effect transistor has been realized by using the cross-linked cyanoethylated poly(vinyl alcohol) (CR-V) as a gate dielectric. The cross-linked CR-V dielectric was found to have a high dielectric constant of 12.6 and good insulating properties, resulting in a high capacitance (92.9 nF/cm(2) at 20 Hz) for a dielectric thickness of 120 nm. A pentacene field-effect transistor fabricated with the cross-linked CR-V dielectric was found to exhibit a high carrier mobility (0.62 cm(2)/V s), a small subthreshold swing (185 mV/decade), and little hysteresis at low operating voltages (<=-3 V). (c) 2006 American Institute of Physics.
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页数:3
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