Low-operating-voltage organic field-effect transistor has been realized by using the cross-linked cyanoethylated poly(vinyl alcohol) (CR-V) as a gate dielectric. The cross-linked CR-V dielectric was found to have a high dielectric constant of 12.6 and good insulating properties, resulting in a high capacitance (92.9 nF/cm(2) at 20 Hz) for a dielectric thickness of 120 nm. A pentacene field-effect transistor fabricated with the cross-linked CR-V dielectric was found to exhibit a high carrier mobility (0.62 cm(2)/V s), a small subthreshold swing (185 mV/decade), and little hysteresis at low operating voltages (<=-3 V). (c) 2006 American Institute of Physics.
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Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Gundlach, DJ
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Jackson, TN
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机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Jackson, TN
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Schlom, DG
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机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Schlom, DG
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Nelson, SF
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机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
机构:
Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Gundlach, DJ
;
Jackson, TN
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机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Jackson, TN
;
Schlom, DG
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机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Schlom, DG
;
Nelson, SF
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h-index: 0
机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA