High performance organic transistors on cheap, commercial substrates

被引:30
作者
Majewski, LA [1 ]
Schroeder, R [1 ]
Voigt, M [1 ]
Grell, M [1 ]
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
关键词
D O I
10.1088/0022-3727/37/24/003
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present here our latest results oil high quality gate insulators for organic electronics. Ultra-thin films of n-octadecyltrichlorosilane-treated, anodized aluminium (Al) grown onto flexible, Al-sputtered polyester substrates combine low cost and manufacture under ambient conditions with excellent performance characteristics (negligible leakage and hysteresis. 400 nF cm(-2) capacitance). With pentacene as organic semiconductor, we present organic transistors with inverse subthreshold slope of approximately 200 mV dec(-1), threshold of the order of -2 V and > 10(5) on/off ratio. The subthreshold behaviour is significantly better than for transistors with pentacene deposited onto a gate insulator optimized for high mobility. Above the threshold, the higher capacitance compensates for the somewhat lower mobility. Crucially, the cheap, sputtered Al-on-polyester films resulted in transistors that were as good as transistors fabricated oil the same substrate with evaporated Al.
引用
收藏
页码:3367 / 3372
页数:6
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