Angle dependent X-ray photoemission study on UV-ozone treatments of indium tin oxide

被引:71
作者
Song, WJ
So, SK
Wang, DY
Qiu, Y
Cao, LL [1 ]
机构
[1] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[2] Hong Kong Baptist Univ, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[3] ULVAC PHI Inc, Chigasaki, Kanagawa 2530084, Japan
基金
中国国家自然科学基金;
关键词
angle dependent X-ray photoelectron spectroscopy; indium tin oxide; UV-ozone treatment;
D O I
10.1016/S0169-4332(01)00178-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The surface chemistry of ITO thin-films before and after UV-ozone treatment was characterized using angle dependent Xray photoelectron spectroscopy (ADXPS). After solvent cleaning, the ITO surface was covered with a thin nonconducting carbon contamination layer of similar to7 Angstrom. This contamination layer was removed efficiently by UV-ozone treatment, and the chemical states of the residual carbon at ITO surface after UV-ozone treatment were quite different from contaminated carbon. UV-ozone treatment modified ITO surface by introducing O2- ions into ITO surface. The modified depth was about 50 Angstrom. The modification decreased the carrier concentration at ITO surface, and thus decreased the conductivity of ITO surface. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:158 / 164
页数:7
相关论文
共 18 条
[1]   AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE VALENCE BAND-STRUCTURE OF INDIUM OXIDES [J].
BARR, TL ;
LIU, YL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1989, 50 (07) :657-664
[2]   An organic electroluminescent dot-matrix display using carbon underlayer [J].
Gyoutoku, A ;
Hara, S ;
Komatsu, T ;
Shirinashihama, M ;
Iwanaga, H ;
Sakanoue, K .
SYNTHETIC METALS, 1997, 91 (1-3) :73-75
[3]   A study of the ITO-on-PPV interface using photoelectron spectroscopy [J].
Johansson, N ;
Cacialli, F ;
Xing, KZ ;
Beamson, G ;
Clark, DT ;
Friend, RH ;
Salaneck, WR .
SYNTHETIC METALS, 1998, 92 (03) :207-211
[4]   Indium tin oxide thin films for organic light-emitting devices [J].
Kim, H ;
Piqué, A ;
Horwitz, JS ;
Mattoussi, H ;
Murata, H ;
Kafafi, ZH ;
Chrisey, DB .
APPLIED PHYSICS LETTERS, 1999, 74 (23) :3444-3446
[5]   BINDING-ENERGY REFERENCE IN X-RAY PHOTOELECTRON-SPECTROSCOPY OF INSULATORS [J].
LEWIS, RT ;
KELLY, MA .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 20 (1-2) :105-115
[6]   Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices [J].
Mason, MG ;
Hung, LS ;
Tang, CW ;
Lee, ST ;
Wong, KW ;
Wang, M .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1688-1692
[7]  
Moulder J.F., 1995, HDB XRAY PHOTOELECTR
[8]  
Nüesch F, 1999, APPL PHYS LETT, V74, P880, DOI 10.1063/1.123397
[9]  
Seah M. P., 1979, Surface and Interface Analysis, V1, P2, DOI 10.1002/sia.740010103
[10]   Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices [J].
So, SK ;
Choi, WK ;
Cheng, CH ;
Leung, LM ;
Kwong, CF .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 68 (04) :447-450