In-Ga-Zn-oxide Thin-film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target

被引：3

作者：

Cheong, Woo-Seok ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Printed Devices Res Team, Taejon 305350, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2011年 / 58卷 / 03期

关键词：

Sb2TeOx; Reactive sputtering; Oxide semiconductor; IGZO; Thin-film transistor;

D O I：

10.3938/jkps.58.608

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using reactive sputtering, we made transparent amorphous Sb2TeOx thin films from a metallic Sb2Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb2TeOx gate insulators deposited at room temperature showed a large hysteresis with a counter-clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb2TeOx films formed at 250 degrees C. After the IGZO TFT had been annealed at 200 degrees C for 1 hour in an O-2 ambient, the mobility of the IGZO TFT was 22.41 cm(2)/Vs, and the drain current on-off ratio was similar to 10(8).

引用

页码：608 / 611

页数：4

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