High Current-Gain Cutoff Frequencies above 10MHz in n-Channel C60 and p-Channel Pentacene Thin-Film Transistors

被引：58

作者：

Kitamura, Masatoshi ^{[1
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect NanoQuine, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, IIS, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 01期

关键词：

D O I：

10.1143/JJAP.50.01BC01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current-gain cutoff frequencies for bottom contact n-channel C-60 and p-channel pentacene thin-film transistors (TFTs) with channel lengths of 2-10 mu m have been investigated. The cutoff frequency was estimated by direct measurement of the gate and drain modulation currents. The measured cutoff frequencies for both C-60 and pentacene TFTs increase consistently with reducing channel length. Cutoff frequencies of 27.7 and 11.4 MHz were obtained from C-60 and pentacene TFTs with a channel length of 2 mu m, respectively. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

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