High conductance bottom-contact pentacene thin-film transistors with gold-nickel adhesion layers

被引：42

作者：

Kitamura, Masatoshi ^{[1
]}

Kuzumoto, Yasutaka ^{[1
,2
]}

Kang, Woogun ^{[3
]}

Aomori, Shigeru ^{[1
,2
]}

Arakawa, Yasuhiko ^{[1
,3
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect NanoQuine, Meguro Ku, Tokyo 1538505, Japan

[2] Sharp Co Ltd, Corp Res & Dev Grp, Nara 6328567, Japan

[3] Univ Tokyo, IIS, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 03期

关键词：

adhesion; contact resistance; electrodes; gold alloys; nickel alloys; thin film transistors; RESISTANCE; ELECTRODES; REDUCTION; CHANNEL;

D O I：

10.1063/1.3465735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bottom-contact pentacene thin-film transistors (TFTs) with different electrode types have been fabricated to investigate influence of the adhesion layers and surface modification on the transistor characteristics. Gold-nickel alloy or Ti was used for the adhesion layer; the drain/source electrodes were modified with pentafluorobenzenethiol (PFBT) or nonmodified. The TFTs with AuNi layers and PFBT-modified electrodes exhibit channel-length independent saturation mobility. The electrode-type TFT with a channel length of 2.2 mu m has a saturation mobility of 0.73 cm(2)/V s and a transconductance of 229 mu S/mm. The high performance is attributed to the low contact resistance of 408 cm. (C) 2010 American Institute of Physics. [doi:10.1063/1.3465735]

引用

页数：3

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