Current-gain cutoff frequencies above 10 MHz for organic thin-film transistors with high mobility and low parasitic capacitance

被引：42

作者：

Kitamura, Masatoshi ^{[1
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, INQIE, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期

关键词：

carrier mobility; fullerene devices; thin film transistors;

D O I：

10.1063/1.3176480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current-gain cutoff frequency for bottom contact n-channel C-60 thin-film transistors (TFTs) with channel lengths of 2-10 mu m has been investigated. Patterned gate electrodes were adopted to reduce parasitic capacitance of the TFTs. The cutoff frequency was estimated by direct measurement of the gate and drain modulation currents. The estimated cutoff frequency increases consistently with reducing channel length. A maximum cutoff frequency of 20.0 MHz was obtained from a C-60 TFT with a channel length of 2 mu m and a saturation mobility of 1.11 cm(2)/V s.

引用

页数：3

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