Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

被引：74

作者：

Yu, HY ^{[1
]}

Lim, HF

Chen, JH

Li, MF

Zhu, CX

Tung, CH

Du, AY

Wang, WD

Chi, DZ

Kwong, DL

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

[3] Inst Mat Res & Engn, Singapore 117602, Singapore

[4] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 04期

关键词：

HfN; metal gate; midgap work function; MOSFET's; TaN;

D O I：

10.1109/LED.2003.812143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the physical and electrical properties of physical vapor deposited (PVD) hafnium nitride (HfN) is studied for the first time as the metal gate electrode for advanced MOS devices applications. It is found that HfN possesses a midgap work function in tantalum nitride (TaN)/HfN/SiO2/Si MOS structures. TaN/HfN stacked metal-gated MOS capacitors exhibit negligible variations on equivalent oxide thickness (EOT), leakage current, and work function upon high-temperature treatments (up to 1000degreesC), demonstrating the excellent thermal stability of HfN metal gate on SiO2. Our results suggest that HfN metal electrode is an ideal candidate for the fully depleted SOI and/or symmetric double gate MOS devices application.

引用

页码：230 / 232

页数：3

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