Unusual electrical properties of hydrothermally grown ZnO

被引：22

作者：

Look, D. C. ^{[1
]}

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期

基金：

美国国家科学基金会;

关键词：

ZnO; hall effect; surface conduction; photoluminescence; hydrothermal growth;

D O I：

10.1016/j.spmi.2007.04.058

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Bulk ZnO of high structural and optical quality can be grown by the hydrothermal method. An X-ray rocking-curve linewidth of 18 arcsec has been measured for the (002) reflection, and a photoluminescence linewidth of 0.3 meV has been found for one of the donor-bound exciton lines. However, the electrical properties are unusual in that shallow donors are not dominant, as is the case for vapor-phase-grown and melt-grown bulk crystals. This situation can be greatly modified by annealing in forming gas (5% H-2 in N-2) at T-A >= 600 degrees C, with bulk shallow donors then becoming completely dominant for T-meas > 50 K, and near-surface donors at lower temperatures. As T-A is varied from 100-650 degrees C, both the mobility and carrier concentraticm vary in nonmonotonic fashion, due to changes in the relative strengths of the bulk and surface components of conduction. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：284 / 289

页数：6

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