Effects of surface conduction on Hall-effect measurements in ZnO

被引：69

作者：

Look, DC ^{[1
]}

Mosbacker, HL

Strzhemechny, YM

Brillson, LJ

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] Ohio State Univ, Ctr Mat Res, Columbus, OH 43210 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2005年 / 38卷 / 4-6期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/j.spmi.2005.08.013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Conduction processes in as-grown and annealed n-type ZnO crystals have been studied by means of Hall-effect measurements and X-ray photoelectron spectroscopy (XPS). For temperatures above approximately 50 K, the conductance is dominated by electrons in the bulk of the crystal, whereas below that temperature, surface conductance becomes more important. As the crystals are annealed in flowing N-2 gas, the surface sheet carrier concentration increases, and concomitantly, the OH-bond peak in the XPS spectrum becomes a larger fraction of the total O peak. Conversely, either O-2-plasma annealing or electron-beam irradiation produces a decrease in the surface conductance and the OH fraction. Thus, H-related donors are likely the cause of the surface conductance. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：406 / 412

页数：7

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