RETRACTED: Recent progress in processing and properties of ZnO (Retracted Article)

被引:1599
作者
Pearton, SJ
Norton, DP
Ip, K
Heo, YW
Steiner, T
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] USAF, Off Sci Res, Arlington, VA 22217 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/j.pmatsci.2004.04.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN system. In this paper we summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferro-magnetism in transition-metal doped ZnO. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:293 / 340
页数:48
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